Physics – Condensed Matter – Materials Science
Scientific paper
2011-05-19
J. Appl. Phys. 109, 124117 (2011)
Physics
Condensed Matter
Materials Science
23 pages, 4 figures, accepted by J. Appl. Phys
Scientific paper
10.1063/1.3601113
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field - induced carriers trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.
Bürger Danilo
Helm Manfred
Schmidt Heidemarie
Shuai Yao
Zhou Shengqiang
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