Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel

Details Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel

2011-11-07

arxiv.org/abs/1111.1523v2

Physics

Condensed Matter

Materials Science

Scientific paper

The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion frequently used cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.

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