Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

Details Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

2005-04-19

arxiv.org/abs/cond-mat/0504475v1

Pis'ma JETP, 81 #8, 502 (2005) [JETP Letters 81, #8 (2005)]

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1134/1.1951019

Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (TTm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.

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