Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in the Surface States

Details Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in the Surface States Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in the Surface States

2005-10-03

arxiv.org/abs/cond-mat/0510035v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, to be published in J. Phys. Soc. Japan

Scientific paper

10.1143/JPSJ.74.3143

Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an electronic excitation model by hot carriers injected to the surface states. The critical distance of the motion is anisotropic and consistent with the band structure of the surface states.

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