Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States

Details Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States

2002-04-11

arxiv.org/abs/cond-mat/0204249v1

Physics

Condensed Matter

4 pages, 3 figures, revtex 4, submitted to PRL

Scientific paper

The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped nanotubes is positive, indicating hole-like carriers. In contrast, the nitrogen doped material exhibits negative TEP over the same temperature range, suggesting electron-like conduction. Therefore, the TEP distinct nonlinearites are primarily due to the formation of donor and acceptor states in the B- and N- doped materials. The sharply varying density of states used in our model can be directly correlated to the scanning tunneling spectroscopy studies of these materials.

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