Nonexponetial relaxation of photoinduced conductance in organic field effect transistor

Details Nonexponetial relaxation of photoinduced conductance in organic field effect transistor Nonexponetial relaxation of photoinduced conductance in organic field effect transistor

2003-09-12

arxiv.org/abs/cond-mat/0309303v1

Physics

Condensed Matter

Materials Science

17 pages, 3 Figures

Scientific paper

10.1103/PhysRevB.68.125208

We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process cannot be physically explained by processes, which lead to a simple or a stretched-exponential decay behavior. Models based on serial relaxation dynamics due to a hierarchy of systems with increasing spatial separation of the photo-generated negative and positive charges are used to explain the results. In order to explain the observed trend, the model is further modified by introducing a gate voltage dependent coulombic distribution manifested by the trapped negative charge carriers.

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