Nondestructive characterization of Ti-doped and V-doped CdTe by time-dependent charge measurement

Details Nondestructive characterization of Ti-doped and V-doped CdTe by time-dependent charge measurement Nondestructive characterization of Ti-doped and V-doped CdTe by time-dependent charge measurement

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..265e&link_type=abstract

Proc. SPIE Vol. 2554, p. 265-268, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

Physics

Scientific paper

As a nondestructive, contactless characterization method time dependent charge measurements (TDCM) are used for the investigation of high resistivity CdTe doped with vanadium or titanium. TDCM is presented as a multi-purpose technique which allows for the examination of the resistivity, the thermal activation energy of the charge carriers, the photosensitivity and the surface voltage (SPV). Strong axial variations of the physical properties are observed as a consequence of the segregation of the dopants.

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