Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures

Details Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures

2012-03-20

arxiv.org/abs/1203.4406v1

J. Appl. Phys. 111, 056101 (2012)

Physics

Condensed Matter

Materials Science

Communication

Scientific paper

10.1063/1.3691599

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form {\Delta}G/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.

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