Non-volatile Complementary Resistive Switch-based Content Addressable Memory

Details Non-volatile Complementary Resistive Switch-based Content Addressable Memory Non-volatile Complementary Resistive Switch-based Content Addressable Memory

2011-08-18

arxiv.org/abs/1108.3716v2

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

This paper presents a novel resistive-only Binary and Ternary Content
Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive
Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON
state transition that enables this novel CRS application.

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