Non-thermal photocoercivity effect in a ferromagnetic semiconductor

Details Non-thermal photocoercivity effect in a ferromagnetic semiconductor Non-thermal photocoercivity effect in a ferromagnetic semiconductor

2008-10-22

arxiv.org/abs/0810.4027v1

Phys. Rev. Lett. 102, 187401 (2009)

Physics

Condensed Matter

Materials Science

Scientific paper

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

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