Physics – Condensed Matter – Materials Science
Scientific paper
2007-11-30
Phys. Rev. B 78, 165329 (2008)
Physics
Condensed Matter
Materials Science
6 pages, 7 figures
Scientific paper
10.1103/PhysRevB.78.165329
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied across the transport layer is used to vary the confinement potential caused by conduction band-bending and control the dominant transport mechanism between drift and diffusion. By modeling transport in this device with a Monte-Carlo scheme, we simulate the observed spin polarization and Hanle features, showing that the average transit time across the short Si transport layer can be controlled over 4 orders of magnitude with applied voltage. As a result, this modeling allows inference of a long electron spin lifetime, despite the short transit length.
Appelbaum Ian
Huang Biqin
Jang Hyuk-Jae
Li Jing
Xu Jing
No associations
LandOfFree
Non-ohmic spin transport in n-type doped silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Non-ohmic spin transport in n-type doped silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-ohmic spin transport in n-type doped silicon will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-702068