Non-Ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K

Details Non-Ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K Non-Ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K

Feb 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998phrvb..57.4472z&link_type=abstract

Physical Review B (Condensed Matter and Materials Physics), Volume 57, Issue 8, February 15, 1998, pp.4472-4481

Physics

Condensed Matter

20

High-Field And Nonlinear Effects, Phonon-Electron And Phonon-Phonon Interactions, X- And Gamma-Ray Telescopes And Instrumentation, Elemental Semiconductors

Scientific paper

We have studied non-Ohmic effects in hopping conduction in moderately compensated ion-implanted Si:P, B (both n- and p-type) and neutron-transmutation-doped Ge:Ga,As over the temperature range 0.05-0.8 K and up to moderately strong electric fields. In the limit of small fields, where the current is proportional to applied voltage, the resistivities of these materials are approximated over a wide temperature range by the model of variable range hopping with a Coulomb gap: ρ=ρ0 exp(T0/T)1/2. The samples included in this study have characteristic temperatures T0 in the range 1.4-60 K for silicon, and 22-60 K for germanium. We have compared our data to exponential and ``hyperbolic-sine'' field-effect models of the electrical nonlinearity: ρ(E)=ρ(0)e-x and ρ(E)=ρ(0)x/sinh(x), where x≡eEl/kT, and to an empirical hot-electron model. The exponential field-effect model tends to be a good representation for the samples with high T0 at low T. The sinh model can match the data only at low fields. The hot-electron model fits our data well over a wide range of power in the low-T0-high-T regime. We discuss the quantitative implications of these results for the application of these materials as thermometers for microcalorimeters optimized for high-resolution spectroscopy.

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