Non-invasive probing of random local potential fluctuations in ZnCdSe/ZnSe quantum wells

Details Non-invasive probing of random local potential fluctuations in ZnCdSe/ZnSe quantum wells Non-invasive probing of random local potential fluctuations in ZnCdSe/ZnSe quantum wells

2009-06-23

arxiv.org/abs/0906.4218v2

J. Appl. Phys. 107, 093717 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3373415

Temperature dependence and recombination behavior of trapped charge carriers in ZnCdSe/ZnSe multiple quantum wells are investigated employing surface acoustic waves. These weakly perturb the carrier system, but remain highly sensitive even at small conductivities. Using this non-invasive probe we are able to detect persistent photoconductivity minutes after optical excitation. Measurement of exciting photon energies, the temperature dependence and ability to quench the conductivity with energies lower than the bandgap, support the notion of spatial separation of electrons and holes in the wells, due to random local potential fluctuations possibly induced by compositional fluctuations.

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