Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers

Details Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers

2008-05-23

arxiv.org/abs/0805.3566v1

Physics

Condensed Matter

Materials Science

Scientific paper

In the resistive phase transition in VO2, temperature excursions from points on the major hysteresis loop produce minor loops. We have found that for sufficiently small excursions these minor loops degenerate into single-valued, non-hysteretic branches (NHBs) having essentially the same or even higher temperature coefficient of resistance (TCR) as the semiconducting phase at room temperature. We explain this behavior and discuss the opportunities it presents for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 100 to 1000 times smaller resistivity than in a pure semiconducting phase, thus providing a microbolometer with low tunable resistivity and high TCR.

Affiliated with

Also associated with

No associations

Rating

Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-500179