Non-Gaussianity of resistance fluctuations near electrical breakdown

Details Non-Gaussianity of resistance fluctuations near electrical breakdown Non-Gaussianity of resistance fluctuations near electrical breakdown

2003-10-28

arxiv.org/abs/cond-mat/0310643v1

Semic. Sci. Tech. 19(4) S164 (2004)

Physics

Condensed Matter

3 figures, accepted for publication on Semicond Sci Tech

Scientific paper

10.1088/0268-1242/19/4/057

We study the resistance fluctuation distribution of a thin film near electrical breakdown. The film is modeled as a stationary resistor networkunder biased percolation. Depending on the value of the external current,on the system sizes and on the level of internal disorder, the fluctuation distribution can exhibit a non-Gaussian behavior. We analyze this non-Gaussianity in terms of the generalized Gumbel distribution recently introduced in the context of highly correlated systems near criticality. We find that when the average fraction of defects approaches the random percolation threshold, the resistance fluctuation distribution is well described by the universal behavior of the Bramwell-Holdsworth-Pinton distribution.

Affiliated with

Also associated with

No associations

Rating

Non-Gaussianity of resistance fluctuations near electrical breakdown does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Non-Gaussianity of resistance fluctuations near electrical breakdown, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-Gaussianity of resistance fluctuations near electrical breakdown will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-136801