Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers

Details Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers

2006-07-23

arxiv.org/abs/cond-mat/0607580v2

Phys. Rev. B 76, 035324 (2007)

Physics

Condensed Matter

Materials Science

To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.76.035324

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different post-growth annealing conditions and spacer layer thickness suggest that the positive magnetoresistance peaks originate in a noncollinear spin valve effect due to spin-dependent scattering that is believed to occur primarily at interfaces.

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