Noise in Al single electron transistors of stacked design

Details Noise in Al single electron transistors of stacked design Noise in Al single electron transistors of stacked design

1998-04-17

arxiv.org/abs/cond-mat/9804197v1

J. Appl. Phys. 84, 3212-3215 (1998)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages of text with 1 table and 5 figures

Scientific paper

10.1063/1.368474

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5 - 7)*10E-5 e/sqrt(Hz) at f = 10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.

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