NMR study of electronic state in CePt3Si

Details NMR study of electronic state in CePt3Si NMR study of electronic state in CePt3Si

2004-09-24

arxiv.org/abs/cond-mat/0409638v1

Physics

Condensed Matter

Superconductivity

2 pages with 2 EPS figures. uses phb-proc4-auth.cls. Accepted for publication in Physica B

Scientific paper

10.1016/j.physb.2005.01.065

In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc.

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