Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

Details Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

2007-08-16

arxiv.org/abs/0708.2221v1

Applied Physics Letters 88 (24) 241904 (2006)

Physics

Condensed Matter

Materials Science

11 pages, 4 figures, Journal

Scientific paper

10.1063/1.2186101

InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.

Affiliated with

Also associated with

No associations

Rating

Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-332432