Physics – Condensed Matter – Materials Science
Scientific paper
2008-10-28
Phys. Rev. B 78, 195206 (2008)
Physics
Condensed Matter
Materials Science
8 pages with figures included
Scientific paper
10.1103/PhysRevB.78.195206
High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidating the mechanism for the ferromagnetism and exploring high-performance Cr-doped AlN diluted magnetic semiconductors.
Liu Bang-Gui
Shi Li-Jie
Zhao Yong-Hong
Zhu Li-Fang
No associations
LandOfFree
Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-486012