Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors

Details Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors

2011-10-24

arxiv.org/abs/1110.5291v1

Phys. Rev. B 84, 153406 (2011)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures. Accepted for publication in Physical Review B

Scientific paper

10.1103/PhysRevB.84.153406

Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed surfaces of Co, Ni and Cu match almost perfectly, it should be possible to prepare ideal interfaces between these materials which are respectively, a semimetal, insulator, semiconductor, ferromagnetic and nonmagnetic metals. Using parameter-free energy minimization and electronic transport calculations, we show how h-BN can be combined with the perfect spin ?filtering property of Ni|graphite and Co|graphite interfaces to make perfect tunnel junctions or ideal spin injectors (SI) with any desired resistance-area product.

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