New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

Details New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

2009-05-13

arxiv.org/abs/0905.2142v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

LaTeX, 12 pages, 7 figures

Scientific paper

Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.

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