New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime

Details New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime

2003-08-19

arxiv.org/abs/cond-mat/0308371v1

Physica E 22 (2004) 236

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

accepted proceedings of EP2DS-15 (to be published in Physica E)

Scientific paper

10.1016/j.physe.2003.11.257

We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.

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