Negative Magnetoresistance in (In,Mn)As

Details Negative Magnetoresistance in (In,Mn)As Negative Magnetoresistance in (In,Mn)As

2004-06-09

arxiv.org/abs/cond-mat/0406230v1

Physics

Condensed Matter

Materials Science

8 pages, 4 figures, accepted to Physical Review B

Scientific paper

10.1103/PhysRevB.70.073303

The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 ohm-cm to 0.05 ohm-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.

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