Negative differential resistance in scanning tunneling microscopy: simulations on C$_{60}$-based molecular overlayers

Details Negative differential resistance in scanning tunneling microscopy: simulations on C$_{60}$-based molecular overlayers Negative differential resistance in scanning tunneling microscopy: simulations on C$_{60}$-based molecular overlayers

2011-01-19

arxiv.org/abs/1101.3714v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages 4 figures

Scientific paper

We determine the conditions in which negative differential resistance (NDR) appears in the C$_{60}$-based molecular device of [Phys. Rev. Lett. {\bf 100}, 036807 (2008)] by means of ab-initio electron-transport simulations. Our calculations grant access to bias-dependent intrinsic properties of the molecular device, such as electronic levels and their partial widths. We show that these quantities depend on the molecule-molecule and molecule-electrode interactions of the device. Hence, NDR can be tuned by modifying the bias behavior of levels and widths using both types of interactions.

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