Negative differential resistance due to single-electron switching

Details Negative differential resistance due to single-electron switching Negative differential resistance due to single-electron switching

1998-09-21

arxiv.org/abs/cond-mat/9809272v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures; submitted to APL

Scientific paper

10.1063/1.123449

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

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