Physics – Condensed Matter – Materials Science
Scientific paper
2009-06-27
Physics
Condensed Matter
Materials Science
Scientific paper
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL), universal conductance fluctuations (UCF), and inhomogeneous charge transport. A clear WL signal is evident at all measured gate voltages (in the hole doped regime) and temperature ranges (from 0.25 K to 4.3 K), and the phase coherence length extracted from WL data does not saturate at low temperatures. The WL data is fit to demonstrate that electron-electron Nyquist scattering is the major source of phase decoherence. A decrease in UCF amplitude with increasing gate voltage and temperature is shown to be consistent with a corresponding decrease in the phase coherence length. In addition, a weak positive magnetoresistance at higher magnetic fields is observed, and attributed to inhomogeneous charge transport.
Bae Myung-Ho
Bezryadin Alexey
Chen Yung-Fu
Chialvo Cesar
Dirks Travis
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