Near-threshold properties of the electronic density of layered quantum-dots

Details Near-threshold properties of the electronic density of layered quantum-dots Near-threshold properties of the electronic density of layered quantum-dots

2011-12-30

arxiv.org/abs/1201.0145v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 6 figures, regular article

Scientific paper

We present a way to manipulate an electron trapped in a layered quantum dot based on near-threshold properties of one-body potentials. We show that potentials with a simple global parameter allows the manipulation of the wave function changing its spatial extent. This phenomenon seems to be fairly general and could be implemented using current quantum-dot quantum wells technologies and materials if a proper layered quantum dot is designed. The layered quantum dot under consideration is similar to a quantum-dot quantum well device, i.e. consists of a spherical core surrounded by successive layers of different materials. The number of layers and the constituent material are chosen to highlight the near-threshold properties. In particular we show that the near-threshold phenomena can be observed using an effective mass approximation model that describes the layered quantum dot which is consistent with actual experimental parameters.

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