Nanostructures in p-GaAs with improved tunability

Details Nanostructures in p-GaAs with improved tunability Nanostructures in p-GaAs with improved tunability

2010-05-26

arxiv.org/abs/1005.4799v1

Applied Physics Letters 97, 022110 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1063/1.3463465

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.

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