Nanoscale studies of domain wall motion in epitaxial ferroelectric thin films

Details Nanoscale studies of domain wall motion in epitaxial ferroelectric thin films Nanoscale studies of domain wall motion in epitaxial ferroelectric thin films

2004-11-07

arxiv.org/abs/cond-mat/0411178v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

13 pages, 15 figures, to be published in J. App. Phys. special issue on ferroelectrics

Scientific paper

Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which nucleation is followed by radial domain growth. During this growth, the domain wall velocity exhibits a v ~ exp[-(1/E)^mu] dependence on the electric field, characteristic of a creep process. The domain wall motion was analyzed both in the context of stochastic nucleation in a periodic potential as well as the canonical creep motion of an elastic manifold in a disorder potential. The dimensionality of the films suggests that disorder is at the origin of the observed domain wall creep. To investigate the effects of changing the disorder in the films, defects were introduced during crystal growth (a-axis inclusions) or by heavy ion irradiation, producing films with planar and columnar defects, respectively. The presence of these defects was found to significantly decrease the creep exponent mu, from 0.62 - 0.69 to 0.38 - 0.5 in the irradiated films and 0.19 - 0.31 in the films containing a-axis inclusions.

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