Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects

Details Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects

2010-10-18

arxiv.org/abs/1010.3487v1

Superlattices and Microstructures, Vol.39, pp. 395-405, May 2006

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm. We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.

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