Physics – Condensed Matter – Materials Science
Scientific paper
2002-12-23
Physics
Condensed Matter
Materials Science
11 pages, 4 figures
Scientific paper
10.1103/PhysRevB.68.033401
Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below $\sim$~50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent $\alpha=0.53\pm0.02$.
Dev B. N.
Goswami D. K.
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