Nanoscale rectification at the LaAlO3/SrTiO3 interface

Details Nanoscale rectification at the LaAlO3/SrTiO3 interface Nanoscale rectification at the LaAlO3/SrTiO3 interface

2009-12-18

arxiv.org/abs/0912.3714v2

Appl. Phys. Lett. 97, 013102 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3459138

Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.

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