Nanoscale Defect Formation on InP(111) Surfaces after MeV Sb Implantation

Details Nanoscale Defect Formation on InP(111) Surfaces after MeV Sb Implantation Nanoscale Defect Formation on InP(111) Surfaces after MeV Sb Implantation

2005-04-22

arxiv.org/abs/cond-mat/0504584v1

J. Appl. Phys. 99, 014304(2006)

Physics

Condensed Matter

Materials Science

18 pages, 9 figures

Scientific paper

10.1063/1.2150262

We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, demonstrates two varied behaviors as a function of Sb ion fluence. Initially, the roughness increases with increasing fluence. However, after a critical fluence the roughness decreases with increasing fluence. We have further applied the technique of Raman scattering to investigate the implantation induced modifications and disorder in InP. Raman Scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, InP lattice becomes amorphous.

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