Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope

Details Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope

2007-03-09

arxiv.org/abs/cond-mat/0703241v1

Appl. Phys. Lett. 90, 143106 (2007)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures, 1 table

Scientific paper

10.1063/1.2719164

We report topography-free materials contrast imaging on a nano-fabricated Boron-doped Silicon sample measured with a Near-field Scanning Microwave Microscope over a broad frequency range. The Boron doping was performed using the Focus Ion Beam technique on a Silicon wafer with nominal resistivity of 61 Ohm.cm. A topography-free doped region varies in sheet resistance from 1000Ohm/Square to about 400kOhm/Square within a lateral distance of 4 micrometer. The qualitative spatial-resolution in sheet resistance imaging contrast is no worse than 100 nm as estimated from the frequency shift signal.

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