Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

Details Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

2005-05-10

arxiv.org/abs/cond-mat/0505222v1

Physics

Condensed Matter

Soft Condensed Matter

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.95.187206

A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

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