Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

Details Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

2005-07-22

arxiv.org/abs/cond-mat/0507519v1

Physics

Condensed Matter

Superconductivity

7 pages, 6 figures, submitted to Applied Physics Letters

Scientific paper

10.1088/0953-2048/19/6/027

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K.

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