Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

Details Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

2006-10-10

arxiv.org/abs/cond-mat/0610277v1

J. Appl. Phys. 101, 04302 (2007)

Physics

Condensed Matter

Materials Science

22 pages, 6 figures, submitted to J. Appl. Phys

Scientific paper

10.1063/1.2717544

We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.

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