$n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field

Details $n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field $n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field

1998-07-24

arxiv.org/abs/cond-mat/9807325v1

Physics

Condensed Matter

10 pages, latex, 4 figures in gif format, to be submitted to "Physica Status Solidi"

Scientific paper

It is established experimentally that the low temperature photoelectric spectra line width of shallow impurities depends not only on charged impurity concentration $N_i=2KN_A$ and degree of samples compensation $% K=N_A/N_D$, as it was believed earlier.To a great extent it depends on the impurity distribution inhomogeneity also.For samples with homogeneous and inhomogeneous distribution of impurities line width dependence character on external electric fields, smaller than break down one, are different.This broadening mechanism allows to control the quality of samples with nearly equal impurity concentrations.

Affiliated with

Also associated with

No associations

Rating

$n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with $n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and $n-GaAs$ quality diagnose from shallow impurities photoelectric spectroscopy line shapes dependence on electric field will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-243334