Muonium as a shallow center in GaN

Details Muonium as a shallow center in GaN Muonium as a shallow center in GaN

2004-02-05

arxiv.org/abs/cond-mat/0402155v1

Phys. Rev. Lett. 92, 135505 (2004)

Physics

Condensed Matter

Materials Science

4 figures, to be published in Phys. Rev. Letters

Scientific paper

10.1103/PhysRevLett.92.135505

A paramagnetic muonium (Mu) state with an extremely small hyperfine parameter was observed for the first time in single-crystalline GaN below 25 K. It has a highly anisotropic hyperfine structure with axial symmetry along the [0001] direction, suggesting that it is located either at a nitrogen-antibonding or a bond-centered site oriented parallel to the c-axis. Its small ionization energy (=< 14 meV) and small hyperfine parameter (--10^{-4} times the vacuum value) indicate that muonium in one of its possible sites produces a shallow state, raising the possibility that the analogous hydrogen center could be a source of n-type conductivity in as-grown GaN.

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