Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties

Details Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties

2007-09-14

arxiv.org/abs/0709.2251v1

Physics

Condensed Matter

Materials Science

13 pages, 3 figures, 1 table

Scientific paper

10.1021/nl070973y

Using empirical scheme, atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by presence of the proposed objects. The Extended Huckel Theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.

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