Multiple Quantum Well AlGaAs Nanowires

Details Multiple Quantum Well AlGaAs Nanowires Multiple Quantum Well AlGaAs Nanowires

2008-03-06

arxiv.org/abs/0803.0881v1

Nano Lett.; (Letter); 2008; 8(2); 495-499

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/nl0726306

This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Micro-photoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to non-segmented NWs due to carrier confinement and sidewall passivation.

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