Multiband tight-binding model of local magnetism in GaMnAs

Details Multiband tight-binding model of local magnetism in GaMnAs Multiband tight-binding model of local magnetism in GaMnAs

2003-05-06

arxiv.org/abs/cond-mat/0305118v3

Phys. Rev. Lett. 92, 047201 (2004)

Physics

Condensed Matter

Materials Science

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.92.047201

We present the spin and orbitally resolved local density of states (LDOS) for a single Mn impurity and for two nearby Mn impurities in GaAs. The GaAs host is described by a sp^3 tight-binding Hamiltonian, and the Mn impurity is described by a local p-d hybridization and on-site potential. Local spin-polarized resonances within the valence bands significantly enhance the LDOS near the band edge. For two nearby parallel Mn moments the acceptor states hybridize and split in energy. Thus scanning tunneling spectroscopy can directly measure the Mn-Mn interaction as a function of distance.

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