Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

Details Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

2010-01-21

arxiv.org/abs/1001.3784v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 5 figures, two supplementary files

Scientific paper

A multiband empirical tight-binding model for group-III-nitride semiconductors with a wurtzite structure has been developed and applied to both bulk systems and embedded quantum dots. As a minimal basis set we assume one s-orbital and three p-orbitals, localized in the unit cell of the hexagonal Bravais lattice, from which one conduction band and three valence bands are formed. Non-vanishing matrix elements up to second nearest neighbors are taken into account. These matrix elements are determined so that the resulting tight-binding band structure reproduces the known Gamma-point parameters, which are also used in recent kp-treatments. Furthermore, the tight-binding band structure can also be fitted to the band energies at other special symmetry points of the Brillouin zone boundary, known from experiment or from first-principle calculations. In this paper, we describe details of the parametrization and present the resulting tight-binding band structures of bulk GaN, AlN, and InN with a wurtzite structure. As a first application to nanostructures, we present results for the single-particle electronic properties of lens-shaped InN quantum dots embedded in a GaN matrix.

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