Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells

Details Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells

2008-04-15

arxiv.org/abs/0804.2309v2

Phys. Rev. B 77, 235323 (2008).

Physics

Condensed Matter

Materials Science

11 pages, 8 figures, Phys. Rev. B 78, 2008, in press

Scientific paper

10.1103/PhysRevB.77.235323

Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with electric field, especially when the temperature is relatively low. We show that $L$ valleys play the role of a ``drain'' of the total spin polarization due to the large spin-orbit coupling in $L$ valleys and the strong $\Gamma$-$L$ inter-valley scattering, and thus can enhance spin relaxation of the total system effectively when the in-plane electric field is high. Under electric field, spin precession resulting from the electric-field-induced magnetic field is observed. Meanwhile, due to the strong $\Gamma$-$L$ inter-valley scattering as well as the strong inhomogeneous broadening in $L$ valleys, electron spins in $L$ valleys possess almost the same damping rate and precession frequency as those in $\Gamma$ valley. This feature still holds when a finite static magnetic field is applied in Voigt configuration, despite that the $g$-factor of $L$ valleys is much larger than that of $\Gamma$ valley. Moreover, it is shown that the property of spin precession of the whole system is dominated by electrons in $\Gamma$ valley. Temperature, magnetic field, and impurity can affect spin relaxation in low electric field regime. However, they are shown to have marginal influence in high electric field regime.

Affiliated with

Also associated with

No associations

Rating

Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-652882