Multi-excitonic complexes in single InGaN quantum dots

Details Multi-excitonic complexes in single InGaN quantum dots Multi-excitonic complexes in single InGaN quantum dots

2006-10-16

arxiv.org/abs/cond-mat/0610425v1

Appl. Phys. Lett. 84, 4023 (2004)

Physics

Condensed Matter

Materials Science

3 pages, 4 figures

Scientific paper

10.1063/1.1751214

Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.

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