Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

Details Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

2011-03-19

arxiv.org/abs/1103.3768v1

Appl. Phys. Lett. 97, 133509 (2010)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.3494533

We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such an amplification is actually bounded by the appearance of multi-domain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.

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