Mott-Hubbard localization in model of electronic subsystem of doped fullerides

Details Mott-Hubbard localization in model of electronic subsystem of doped fullerides Mott-Hubbard localization in model of electronic subsystem of doped fullerides

2012-01-13

arxiv.org/abs/1201.2748v1

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $AC_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.

Affiliated with

Also associated with

No associations

Rating

Mott-Hubbard localization in model of electronic subsystem of doped fullerides does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Mott-Hubbard localization in model of electronic subsystem of doped fullerides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mott-Hubbard localization in model of electronic subsystem of doped fullerides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-471008