Mott Gap Excitations and Resonant Inelastic X-Ray Scattering in Doped Cuprates

Details Mott Gap Excitations and Resonant Inelastic X-Ray Scattering in Doped Cuprates Mott Gap Excitations and Resonant Inelastic X-Ray Scattering in Doped Cuprates

2003-03-13

arxiv.org/abs/cond-mat/0303242v2

Phys. Rev. Lett. 91, 117001 (2003).

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures, revised version; to be published in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.91.117001

Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-Tc cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.

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