Morphology of graphene thin film growth on SiC(0001)

Details Morphology of graphene thin film growth on SiC(0001) Morphology of graphene thin film growth on SiC(0001)

2007-10-03

arxiv.org/abs/0710.0877v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1088/1367-2630/10/2/023034

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

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